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SiC yakavhara porous graphite disk yeSi epitaxy
Iyo SiC Coated Porous Graphite Disk kubva kuSemixlab Semiconductor yakagadzirirwa advanced Si epitaxy reactors, uko kuenzana kwetembiricha uye kuchena kwemaitiro kwakakosha. Yakavakwa kubva pakakwirira-kuchena isostatic porous graphite uye yakachengetedzwa nedense CVD SiC coating, dhisiki inovimbisa kugadzikana kwepamusoro-tembiricha kushanda, yunifomu gasi diffusion, uye kusarudzika kuramba hydrogen uye chlorine corrosion.
tsananguro
Semixlab's SiC coated porous graphite disk chinhu chakanyatso-engineered chikamu chakagadzirirwa advanced silicon epitaxy (Si epitaxial kukura) masisitimu. Iyo base zvinhu ndeye isostatic yakanaka-zviyo porous graphite, ine yakakwira yekupisa conductivity, yakaderera density, uye yakagadziridzwa yakavhurika-pore chimiro. Iyo yepamusoro yakaputirwa nedense, yakakwirira-kuchena silicon carbide (SiC) layer, yakaiswa kuburikidza nemakemikari vapor deposition (CVD). Uku kupfekedza kunopa kusarudzika kuramba ngura, kugadzirwa kwechikamu, uye kukukurwa kwemakemikari munzvimbo dzehydrogen uye chlorinated.
Magadzirirwo
| Basic zvemuviri zvimiro zveCVD SiC coating | |
| pfuma | Kukosha kwechimiro |
| Chigadzirwa cheCrystal | FCC β phase polycrystalline, kunyanya (111) yakatarisana |
| Density | 3.21 g / cm³ |
| neukukutu | 2500 Vickers kuoma (500g mutoro) |
| Kukura kweGrain | 2 ~ 10μm |
| Kemikari Kuchena | 99.99995% |
| Kupisa Unyanzvi | 640 J·kg-1·K-1 |
| Sublimation Temperature | 2700 ° C |
| Flexural Simba | 415 MPa RT 4-poindi |
| Young's Modulus | 430 Gpa 4pt bend, 1300 ℃ |
| Thermal Kuitisa | 300Wm-1·K-1 |
| Kuwedzera kweThermal (CTE) | 4.5 × 10-6K-1 |
Applications
Basa uye Basa muSi Epitaxy Process
Mumazuva ano Si epitaxial CVD reactors, kunyatso kudzora kwekufanana kwetembiricha uye kuyerera kwegasi kwakakosha kuti uwane yakakwirira-mhando, isina hurema-isina epitaxial layers. Iyo SiC yakavharwa porous graphite disk inoiswa zvine hungwaru pasi pewafer susceptor kana sechikamu chegasi diffuser gungano kuita zvinotevera mabasa:
1. Gasi Flow Equalization
Iyo porous chimiro inoshanda segasi diffuser, ichivimbisa yunifomu laminar kuyerera kwemagasi egasi (semuenzaniso, SiHCl₃, H₂, HCl) mhiri kwewafer surface. Izvi zvinobatsira kubvisa kuyerera kwemhirizhonga uye kuchengetedza inowirirana deposition rates pahombe wafer madhayamita (6-8 inches).
2. Thermal Field Uniformity
Iine yakakwirira yekupisa conductivity uye yakagadzirirwa pore dhizaini, dhisiki inogovera kupisa zvakaenzana, ichideredza radial tembiricha gradients. Iyo SiC coating's infrared reflectivity inowedzera kushandiswa kwesimba uye inodzikamisa tembiricha yewafer mukati me ± 1°C.
3. Corrosion uye Particle Control
Iyo SiC layer inoita sechidziviriro chinodzivirira, ichidzivirira graphite oxidation, hydrogen etching, uye kabhoni kubuda. Izvi zvinogonesa ultra-clean mamiriro, kuderedza particle-induced defects mu epitaxial layer.
4. Kuvimbika Kwenguva Yakareba
Iko kusanganiswa kweporous graphite uye SiC coating inopa 3-5 × hupenyu hurefu kupfuura uncoated graphite zvikamu, kuderedza downtime uye kugadzirisa frequency.
Semixlab inyanzvi mune yepamusoro SiC yakavharwa graphite zvikamu zve epitaxial kukura, kupisa kwemafuta, uye makristasi ekukura masisitimu. Tekinoroji yedu yemukati-yekupfekedza tekinoroji inovimbisa dhirendi, yunifomu, uye yakakwirira-kuchena SiC masiketi anowedzera chikamu chehupenyu uye anochengetedza hutsanana hwakasiyana pasi pemamiriro ekuita. Madhizaini ega anowanikwa zvichibva pane yako reactor kumisikidzwa, pore saizi zvinodiwa, uye nzvimbo yekupisa. Tinotarisira kune mimwe mibvunzo yako.
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