Porous TaC mhete

Silicon carbide (SiC), yechitatu-yechizvarwa semiconductor zvinhu, ine zvinhu zvakatanhamara senge yakakwira bandgap, yakakwira yekupisa conductivity, uye yakanyanya kuparara munda wemagetsi, zvichiita kuti ive yakakosha muminda senge mota nyowani dzesimba, kutakura njanji, 5G kutaurirana, uye magetsi emagetsi. Kukura kweSiC single crystals kunoda tembiricha yakakwira zvakanyanya (> 2000 ° C) uye hutsinye hwemuviri nemakemikari nharaunda, zvichiisa zvakanyanya kudiwa pazvinhu zvakakosha zvemidziyo yekukura, senge macrucibles uye zvinopisa munda zvikamu. Semixlab inopa Porous tantalum carbide (TaC) mhete, ine yakasarudzika yemuviri uye makemikari zvimiro, yave chinhu chakanakira optimize maitiro ekukura kweSiC imwe chete makristasi.

Hunhu hwakakosha hwe porous tantalum carbide mhete

1. Kugadzikana kwekushisa kwepamusoro

Tantalum carbide melting point inosvika 3880 ℃, musilicon carbide single crystal yekukura tembiricha renji (2000-2500 ℃) kuchengetedza kugadzikana kwechimiro, kudzivirira deformation kana volatilization.

Low thermal expansion coefficient (6.3 × 10⁻⁶/K), kuderedza njodzi yekutsemuka kunokonzerwa nekushushikana kwekupisa.

2. Kemikari inertness

Iine kuwirirana kwakasimba nesilicon carbide, graphite nezvimwe zvinhu, uye haiiti nesilicon (Si) uye kabhoni (C) mhute pakupisa kwepamusoro kudzivirira kusvibisa makristasi.Zvakanaka corrosion resistance kune silicon / carbon gases.

Tsva Yekukurumidza:

1. Mamwe mazita: Porous TaC mhete,Porous Tantalum carbide,TaC yakavharwa mhete

2. Kushandisa: Sezvo chikamu chepakati chemhepo inopisa, TaC ring inodzora kupisa kwemhepo inopisa kuburikidza nekugadzirwa kwayo kweporous, inoderedza kupisa kwekushisa kwemhepo, uye inovandudza axial kukura kufanana kwesilicon carbide single crystal.Inosanganiswa ne graphite heater, kukanganisa kwekristal kusagadzikana kunokonzerwa nekupisa kwenzvimbo kunogona kuderedzwa.

3. Core parameters: Tantalum carbide melting point kusvika 3880 ℃, musilicon carbide single crystal growth temperature range (2000-2500 ℃) kuchengetedza kugadzikana kwechimiro, kudzivirira deformation kana volatilization.

Low thermal expansion coefficient (6.3 × 10⁻⁶/K), kuderedza njodzi yekutsemuka kunokonzerwa nekushushikana kwekupisa.

Chishandiso chakakosha mukukura kwesilicon carbide single crystal

1. Thermal field design uye kutonga kwekushisa

Sechinhu chepakati cheiyo thermal field system, iyo porous TaC mhete inoronga kupisa kwemwaranzi kugovera kuburikidza neyakaomeswa chimiro, inoderedza radial tembiricha gradient, uye inovandudza axial kukura kufanana kwekristaro.

Yakasanganiswa ne graphite heater, kukanganisa kwekristal stress kunokonzerwa nekupisa kwenzvimbo kunogona kuderedzwa.

2. Kutakura gasi uye kugadzirisa kugadzirisa

MuPVT kukura kwevira, porous TaC mhete dzinogona kushandiswa segasi diffusion yepakati kugovera zvakaenzana Si / C mhute kune mhodzi yekristaro pamusoro, iyo inogona kuvandudza kristaro kukura uye mhando yekristaro.

Iyo pore dhizaini inogona adsorb trace tsvina (senge simbi ions) uye kugadzirisa kuchena kwekristaro (resistivity>10⁵ Ω·cm).

3. Gungano rekutsigira hupenyu hurefu

Panzvimbo pechinyakare magirafu zvinhu, rinoshandiswa crucible rutsigiro zvindori kana kupisa insulation layers kudzivirira dambudziko graphite upfu pahupamhi tembiricha uye kuwedzera upenyu basa midziyo (> 1000 maawa).

Iyo porous dhizaini inobvisa kupisa kushushikana kusungirirwa uye inoderedza njodzi yekutsemuka.

TaC mhete inonyanya kushandiswa muPVT nzira

Muchidimbu, Semixlab's Porous TaC Mhete inonatsiridza mhando yekristaro: yunifomu yekupisa munda inoderedza kuremara density uye inotsigira kugadzirira kwehukuru hukuru SiC makristasi e6 inches uye pamusoro.

Maitiro ekuita optimization: Kurumidza kutapurirana gasi kushanda zvakanaka uye kuwedzera kukura kwe10-15%.

Deredza mari yekugadzira: Zvikamu zvehupenyu hurefu zvinoderedza kuwanda kwekugadziriswa kwemidziyo, uye mutengo wakazara unoderedzwa ne20-30%.

Zvakanakira porous chimiro

Iyo inodzoreka porosity (30-60%) inogonesa nzira yekuparadzira gasi uye inosimudzira yunifomu yeSi / C mhute yekufambisa muPVT (yemuviri mhute yekufambisa nzira).

Iyo yakakwirira chaiyo nzvimbo inosimudzira kushanda kwemwaranzi yekupisa, inobatsira kuumba yunifomu tembiricha munda, uye inhibits crystal defects (senge microtubules uye dislocations).