TaC yakavhara porous graphite

Semixlab's Tantalum Carbide (TaC) Yakavharwa Porous Graphite Ring (Tantalum carbide coated porous Graphite Ring) ndeyepamusoro-inoshanda graphite chikamu chakagadzirirwa zvakanyanya kukura kwesilicon carbide (SiC) imwe chete makristasi. Ichi chigadzirwa chakagadzirwa nepamusoro-kuchena porous graphite substrate uye yakaputirwa nepamusoro-tembiricha inodzivirira uye inodzivirira corrosion-resistant tantalum carbide (TaC) yakavharidzirwa pamusoro. Iyo inoratidzira yakanakisa kupisa kutyisa kuramba, kugadzikana kwemakemikari uye hupenyu hurefu hwesevhisi, uye chinhu chakakosha chinodyiwa muSiC imwe chete crystal yekukura fura (PVT nzira).

Product features

1. High-purity porous graphite substrate

Ultra-yakakwirira kuchena (≥99.9999%) isostatic graphite inogamuchirwa, ine controllable porosity, kuve nechokwadi chekufanana kwemafuta ekupisa uye kugona kwegasi, uye nekugadzirisa nharaunda yekukura yeSiC imwe chete makristasi.

Low ash content uye kusvibiswa kwakaderera, kuderedza dambudziko rekusvibiswa panguva yekukura kwekristaro.

2. Tantalum carbide (TaC) coating protection

TaC coating inoratidzira yakanyanya kunyungudika nzvimbo (~ 3880 ℃) uye yakanakisa makemikari inertness, zvinobudirira kudzivirira graphite kubva pakuita neSi / C mhute pakupisa kwakanyanya uye kuderedza kuteurwa kwemagraphite particles kusvibisa makristasi.

Iyo yekupfekedza yakakora uye yakafanana, ichiwedzera zvakanyanya kupikisa oxidation uye kushorwa kweiyo girafu mhete uye kuwedzera hupenyu hwayo hwesevhisi.

3. Excellent thermal kugadzikana

Iyo ine yakaderera coefficient yekuwedzera kwekupisa uye yakasimba yekupisa kuvhunduka kuramba, ichiita kuti ive yakakodzera kukurumidza kukwira nekudonha panguva yekukura kweSiC single crystals (pamusoro pe2000 ℃).

High thermal conductivity inovimbisa yunifomu yekupisa munda kugovera uye inovandudza kunaka kwekristaro kukura.

4. Customized design

Saizi yepore, porosity, dimension yegirafu mhete uye ukobvu hweTaC coating inogona kugadziridzwa zvinoenderana nezvinodiwa nevatengi kuti ienderane nemhando dzakasiyana dzeSiC crystal yekukura mavira (senge induction heat kana kuramba kudziyisa marudzi).

Tsva Yekukurumidza:

Mazita emadunhurirwa: Porous graphite, TaC yakavharwa porous graphite ring, graphite ring, Tantalum carbide coating porous graphite ring, porous graphite mhete yeSiC crystal kukura.

Chinangwa: Ita shuwa kugadzikana kwakagadzikana kwemafirimu emhando yepamusoro muchirongwa chePECVD, uku uchiwedzera kugona kwekugadzira kwemidziyo uye goho remawafer.

Core parameters: Porosity: 10% -30%, kupfeka zvinhu: TaC coating, coating ukobvu: 30 ± 5um, yakanyanya tembiricha yebasa: 2200 ℃ (inert / vacuum nharaunda), kuchena ≥99.9999%, coefficient yekuwedzera kwekushisa ≤5×10/2000⁶ tembiricha - ≤XNUMX×XNUMX/XNUMX⁶ (tembiricha)

Technical parameters

Maitiro ekushanda

● SiC single crystal growth (PVT method) : Sechikamu che crucible kana thermal field component, inoshandiswa pakugadzirisa uye kristall deposition yeSiC raw materials munzvimbo dzakakwirira-kupisa.

● Kugadzirira kwezvimwe zvepamusoro-tembiricha semiconductor zvinhu: zvakadai sekristaro kukura maitiro kune yakakura bandgap semiconductors seGaN neAlN.

● Hupenyu hurefu hwebasa: 

TaC coating inoderedza zvakanyanya kurasikirwa kwegraphite, inodzikisa kutsiva frequency uye inochengetedza mutengo.

● Hunhu hwekristaro hwepamusoro: 

Deredza kusvibiswa kwechikamu uye simbisa kuchena uye kutendeseka kweSiC imwe chete makristasi.

● Kuwanikwa kwakavimbika: 

Iyo yakasimba yemhando yekudzora sisitimu inovimbisa batch kuenderana uye inotsigira hukuru-hukuru hwekugadzira zvinodiwa.

● Tsigiro yebasa:

Ipa tekinoroji kubvunza, inopisa munda dhizaini optimization uye mushure mekutengesa-yekutevera masevhisi.

Tsigira isiri-yakajairwa kugadzirisa kuti isangane neakakosha maitiro zvinodiwa.

● Vatengi vanoshanda: 

SiC substrate vagadziri, semiconductor vagadziri vemidziyo, masangano ekutsvagisa, nezvimwe.

Kuti uwane rumwe ruzivo kana sampuli yekuyedza, ndapota taura nesu!