Ⅰ. Ndeapi mamiriro ekushandisa esilicon carbide ceramic zvigadzirwa?

Silicon carbide (SiC) ceramics inoshandiswa zvakanyanya muchikamu chepakati chekiyi process michina mune semiconductor uye photovoltaic maindasitiri nekuda kwekunaka kwazvo kwekushisa kwekushisa, kuramba kwecorrosion, yakanyanya kupisa conductivity uye kuderera kwekuwedzera kwekuwedzera kwemafuta. Aya anotevera ndiwo chaiwo mamiriro ekushandisa ezvakajairwa zvigadzirwa:

Silicon carbide chikepe

basa:

SiC Boat inowanzo shandiswa kutakura mawafers (akadai sesilicon wafers kana silicon carbide wafers) yekutapurirana uye kumisa mune yakakwirira-tembiricha maitiro.

Zviratidzo zvekushanda:

Semiconductor processing field: Mumavira ekupararira uye oxidation furnaces, chikepe chinoda kushanda zvakasimba kwenguva yakareba munzvimbo ine tembiricha yepamusoro inopfuura 1000 ° C kudzivirira deformation kana kusvibiswa kwewafer nekuda kwekushushikana kwekupisa.

Photovoltaic industry: Mu PECVD (plasma yakawedzera makemikari vapor deposition) midziyo, chikepe chinoshandiswa kutsigira silicon wafers kuisa silicon nitride anti-reflection firimu, uye inoda kutsungirira high-frequency plasma bombardment uye yakakwirira tembiricha nharaunda.

Silicon carbide furnace chubhu (SiC Reaction Tube)

Basa: Sechikamu chepakati chekamuri yekupisa-yepamusoro yekuita, inopa yunifomu tembiricha munda uye makemikari inert nharaunda.

Zviratidzo zvekushanda:

Semiconductor indasitiri: Muchoto che oxidation, chubhu yechoto inoda kugara yakagadzikana kwenguva yakareba mumhepo yeokisijeni kana yemhute yemvura kudzivirira kuburitswa kwetsvina nekuda kweiyo oxidation kana ngura.

Photovoltaic indasitiri: Muchoto chekuparadzira, chubhu yechoto inoshandiswa phosphorus diffusion process (yakadai sekugadzirira kwePERC masero), uye inofanirwa kuramba gasi ane acidic corrosion muPOCl₃ atmosphere.

Cantilever Paddle uye Boat Holder

Basa: Iyo cantilever paddle inoshandiswa kuendesa otomatiki chikepe chekristaro, uye mubati wechikepe anoshandiswa kugadzirisa chinzvimbo chekristaro chikepe.

Zviratidzo zvekushanda:

Mune semiconductor wafer process, iyo cantilever paddle inoda kuchengetedza yakakwirira mechanical simba panguva yekukurumidza kusimudza uye kudzikisa kudzivirira kuputsika nekuda kwekuneta kwekupisa; mubati wechikepe anoda kuchengetedza geometric kurongeka pakupisa kwepamusoro kudzivirira kutsauka kwewafer.

Ⅱ. Ndeapi maitiro ekushandisa esilicon carbide zvinhu mune photovoltaic uye semiconductor maindasitiri?

Iwo epakati mashandisirwo esilicon carbide ceramic zvigadzirwa zvakanangidzirwa mumaitiro ekubatanidza emhando mbiri dzemidziyo:

Maitiro ekuita	Graphite zvinhu	Silicon carbide zvinhu
Yakakwirira tembiricha kugadzikana	Zviri nyore kuisa oxidize (> 500 ° C inoda kuchengetedzwa kwekuvhara)	Anti-oxidation (inogona kumira 1600 ° C oxidizing atmosphere kwenguva yakareba)
Kemikari inertness	Zviri nyore kusvibiswa nemagasi ane acidic (akadai seCl₂, POCl₃)	Acid uye alkali corrosion kuramba (kusanganisira yakasimba corrosive media senge HF, HNO₃)
Particle kusvibiswa njodzi	Zviri nyore kugadzira kusvibiswa kweguruva, zvichikonzera kukanganisa kwewafer	Dense surface, hapana njodzi yekudeuka kwechidimbu
Simba remuchina	Zviri nyore kukanganisa pakupisa kwepamusoro (yakakwira yekupisa yekuwedzera coefficient)	Kuoma kwepamusoro (Mohs kuoma 9.2), kusimba kwekushisa kwekushisa
Kupisa kwemafuta	Anisotropy, njodzi yakakura yekupisa kwenzvimbo	High thermal conductivity (120 W/m`K), yunifomu tembiricha munda

Photovoltaic industry

PECVD choto: inoshandiswa kuisa anti-reflection mafirimu (akadai sesilicon nitride). Silicon carbide zvikamu zvinoda kuramba ion bombardment inokonzerwa nekupenya kwemhepo munzvimbo yeplasma ye400 ~ 500 ° C, ichidzivirira kusvibiswa kwefirimu.

Diffusion furnace: inoshandiswa phosphorus/boron diffusion kugadzira PN junctions. Silicon carbide furnace machubhu inoda kutsungirira ngura kubva kuPOCl₃ kana BBr₃ magasi pa800 ~ 1000 ° C uye ive nechokwadi chekuti doping yakafanana.

Semiconductor industry

Diffusion choto uye oxidation choto:

Diffusion furnace: inoshandiswa kuita annealing process mushure mekuisirwa ion. Silicon carbide crystal mabhoti anofanirwa kudzivirira kuburitsa tsvina yesimbi (seFe, Ni), zvikasadaro zvinokonzeresa kuwedzera wafer kuvuza ikozvino.

Oxidation vira: wedzera silicon dhaidhi dhizaini muokisijeni yakaoma kana mhepo yeokisijeni nharaunda. Silicon carbide furnace tubes inoda kuchengetedza yakaderera oksijeni permeability pane yakakwirira tembiricha ye1200 ° C kudzivirira kusaenzana kwe oxide layer ukobvu.

Ⅲ. Ndezvipi zvakanakira silicon carbide zvinhu pamusoro graphite?

Kunyangwe magirafu zvinhu zvine zvakanakira mutengo wakaderera uye nyore kugadzirisa, iwo akaderera zvakanyanya kune silicon carbide mune anotevera akakosha zvivakwa:

Kuongororwa kwenyaya:

Zvinoenderana nehuwandu hwekugadzirwa kweVeteksemicon, muchoto che semiconductor diffusion, chikepe chegraphite chinoda kuchinjwa mwedzi mitatu yega yega, nepo chikepe chesilicon carbide chinogona kugara kweanopfuura makore maviri, uye goho rewafer rinowedzera ne3% ~ 2%.

Zvinoenderana nedhisheni yekugadzira yakapihwa neSemixlab, Muiyo photovoltaic PECVD process, iyo silicon carbide cantilever paddle inogona kuwedzera kushanda kwebhatiri ne2% ~ 5% nekuda kwekushaikwa kwekusvibiswa kwechikamu.

Ⅳ. sei uchisarudza Semixlab?

Semixlab inotungamira mugadziri uye mutengesi muChina anga akatarisana nekutsvagisa kwegraphite uye SiC pamusoro pekuvhara kwemakore makumi maviri. Mushure memakore ekutsvagisa kwehunyanzvi uye kusimudzira, yedu SiC coating process inogona kuwana kuchena kweinopfuura 20%, uye isu tinogona zvakare kugadzirisa silicon carbide zvigadzirwa zvehutsanana hwakasiyana uye mutengo zvinoenderana nemamiriro ako ekushandisa. Kana iwe uchida yakakwira kuchena chigadzirwa, senge kutarisana zvakananga ne semiconductor wafer zvigadzirwa, tinogona kupa CVD SiC coating, CVD TaC coating uye mamwe maitiro ari pamusoro peiyo substrate zvinhu kusangana neakasiyana ako akaomesesa ehunyanzvi zvinodiwa.