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8 inch Graphite Disk yeSiC Epitaxy
Disk yeGraphite ye8 Inch yeSiC Epitaxy idhisiki rekutsigira rakagadzirwa nemazvo rakagadzirirwa kugonesa kukura kwakasimba uye kunodzokororwa kwesilicon carbide epitaxial pamawafers ane dhayamita hombe. Yakagadzirwa kubva kugraphite ye-isostatic yakachena kwazvo, dhisiki iyi inopa thermal conductivity yakafanana, kugadzikana kwakanaka, uye kusachena kwakaderera mumamiriro ezvinhu akaomarara. Munzvimbo dzekupisa zvakanyanya dzeSiC CVD neMOCVD, inobatsira kuchengetedza munda wethermal wakafanana muwafer, ichideredza kusaenzana kweukobvu, kutenderera kwemucheto, uye kugadzirwa kwezvikanganiso. Kusanganiswa uku kwekuchena kwezvinhu uye kuvimbika kwethermal kunoita kuti graphite disk ive chinhu chakakosha pakugadzira SiC epitaxy ye8-inch ine goho rakakura uye kushanda kwakasimba. Tinogamuchira kubvunza kwako.
tsananguro
Disk yeGraphite Disk yeSiC Epitaxy ine mainchi masere yakagadzirirwa kupa rutsigiro rwakagadzikana, runogona kudzokororwa rwekukura kwesilicon carbide epitaxial pamawafer ane dhayamita hombe. Sezvo maitiro esilicon carbide epitaxy achichinja kubva pakugadzirwa kwe6-inch kuenda ku8-inch, kufanana kwemunda wekupisa uye kugadzikana kwechimiro chekutsigira wafer kunowedzera kukosha. Iyi graphite disk chikamu chakakosha che reactor thermal management system, ichipa nharaunda yekupisa inodzorwa uye yakafanana iyo inokanganisa zvakananga kufanana kweukobvu hweepitaxial layer, kugoverwa kwedopant, uye kudzokorora kwemaitiro ese.
Yakagadzirwa kubva ku-high-purity isostatic graphite, chinhu ichi chakasarudzwa nekuda kwekupisa kwayo kwakanyanya, hunhu hwayo hwe isotropic physical, uye huwandu hwayo husina kuchena. Chimiro che isostatic chinoita kuti huwandu hwemafuta huve hwakafanana uye mhinduro yekupisa ienderane nehukuru hwese hwe 8-inch dhayamita, zvichideredza radial temperature gradients uye mechanical deformation panguva yekushanda kwenguva refu kwekupisa. Mumaitiro akajairika eSiC CVD neMOCVD, uko tembiricha yekukura inowanzo pfuura 1600°C uye kukurumidza kupisa kunowanzoitika, graphite disc inochengetedza flatness uye dimensional stability. Izvi zvinogonesa wafer positioning yakavimbika uye kuchinjika kwekupisa kwakafanana mukati me epitaxial cycle.
Kubva pamaonero ekushanda, dhisiki re graphite re 8-inch rinoita basa guru mukusarudza mamiriro emuganho wekupisa pa wafer-substrate interface. Nekupa mafambiro ekupisa akafanana uye anofungidzirwa, inobatsira kudzvinyirira mhedzisiro ye edge roll-off, inoderedza zvikanganiso zvinokonzerwa nekushushikana, uye inobvumira kudzora kwakasimba pamusoro pe epitaxial layer thickness pamusoro pe wafer yese. Kuchena kwakanyanya kwe graphite substrate kunoderedzawo njodzi dzekusvibiswa kwesimbi uye kuiswa kwe background disadvantage, izvo zvakakosha kune SiC epitaxy yemagetsi inoda defect density yakaderera uye high electrical consistency.
Semugadziri anotungamira wekuChina uye mutengesi wezvikamu zve epitaxial, Semixlab's 8-inch Graphite Disk yeSiC Epitaxy yakagadzirwa zvakananga kuti igadzire SiC epitaxial. Nekubatanidza graphite ye isostatic yakachena kwazvo nekugadzira nemazvo uye kudzora mhando kwakasimba, chigadzirwa ichi chinopa kugadzikana, kuchena, uye kudzokorora kunodiwa kune 8-inch SiC epitaxy ine huwandu hwakawanda. Izvi zvinowedzera mwero wegoho, zvinowedzera nguva yekushanda kwemidziyo, uye zvinoderedza mari yese yekuva muridzi. Panguva imwe chete, Semixlab inoramba yakazvipira kupa masevhisi ekutungamira ekupa mazano ehunyanzvi uye mhinduro dzezvigadzirwa dzakagadzirirwa iwe. Tinotarisira nemoyo wese kuva mubatsiri wako wenguva refu muChina.
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