SiC yakafukidzwa nehafu yemwedzi graphite zvikamu

Zvikamu zveSiC zvakaputirwa nehafu yemwedzi graphite zvinhu zvakakosha zvinoshandiswa zvakanyanya mu silicon epitaxy uye silicon carbide (SiC) epitaxy systems. Mukati me epitaxial reactors, zvikamu izvi zvinoshanda sechimiro, kuumba kuyerera kwegasi, uye zvinhu zvinodzivirira, zvichikanganisa zvakananga kufanana kwefirimu, hunhu hwemucheto, uye kugadzikana kwenguva refu kwemaitiro. Kudzora kwavo kupisa kwakaringana, kugadzikana kwemakemikari, uye kusvibiswa kwakaderera zvakanyanya zvakakosha pakushanda kwemidziyo uye kugadzirwa kwayo, zvichiita kuti zvive zvikamu zvakakosha zve graphite mumaitiro e semiconductor epitaxial.

Mumaitiro ese ari maviri esilicon nesilicon carbide epitaxy, zvikamu zvegrafiti zvakaita secrescent zvinowanzoiswa pedyo nenzvimbo dze substrate kana wafer edge, uko simba rekuyerera kwegasi uye tembiricha zvinonyatsonzwisisika. Iyo crescent geometry yakagadzirwa zvakanyanya kuti iwedzere kugoverwa kwegasi remunharaunda uye thermal equilibrium, nokudaro ichideredza mhedzisiro yemucheto inogona kutungamira mukusiyana kweukobvu hwe epitaxial layer, kushanduka kwehuwandu hwedoping, kana zvikanganiso zvekristaro.

Kubva pamaonero ekuumbwa kwezvinhu, girafiti substrate inopa mafambiro akanaka ekupisa uye mashandiro, zvichigonesa kugadzirwa kwakanyatsojeka kwemavara akaomarara kuti aenderane nemagadzirirwo chaiwo eareactor. Kuti ive nechokwadi chekuti inoenderana nenzvimbo dzakagadzirwa ne epitaxial dzinopisa, girafiti pamusoro payo inoputirwa ne dense layer ye high-purity silicon carbide (SiC). Iyi SiC coating inoshanda sechidziviriro chisina makemikari, ichiratidza kusimba kukuru kwe corrosion kurwisa hydrogen, HCl, uye silicon-based precursor gases dzinowanzo shandiswa mu epitaxial processes. Nekuda kweizvozvo, chikamu ichi chinochengetedza kusimba kwechimiro uye kugadzikana kwenzvimbo panguva yekushanda kwenguva refu kwekupisa kwakanyanya (kazhinji kunopfuura 1500°C mu SiC epitaxy).

Kubva pakuona kwekudzora kusvibiswa, zvikamu zveSiC zvakaputirwa nehafu yemwedzi zvine basa rakakosha mukuchengetedza nzvimbo yakachena yekushanda. SiC coating inodzivirira kugadzirwa kwezvikamu zvegraphite uye inodzivirira kuburitswa kana kunyudzwa kwetsvina yesimbi, zvichibatsira machira kusangana nezvinodiwa zvakasimba zvezvikamu uye kuchena. Izvi zvakakosha zvikuru muSiC epitaxy, uko kunyangwe kusvibiswa kunoderedza kunaka kwekristaro ye epitaxial.

Zvichienzaniswa negrafiti isina kuputirwa kana zvimwe zvinhu, zvikamu zvegrafiti zvehafu yemwedzi zvakaputirwa neSiC zvinowana chiyero chakanaka pakati pekugara kwenguva refu, kushanda kwekupisa, uye kushanda zvakanaka kwemari. Nguva yazvo yekushanda kwenguva refu inoderedza nguva yekugadzirisa uye nguva yekushanda kwekamuri, nepo hunhu hwayo hwakagadzikana huchibatsira pakushanda kwakafanana kwebatch-to-batch. Mabhenefiti aya anoita kuti zvive zvinhu zvisingadhuri zvinoshandiswa mumitsetse yekugadzira Si/SiC epitaxial ine huwandu hwakawanda.

Semugadziri anotungamira wekuChina uye mutengesi wezvikamu zve semiconductor epitaxial process, Semixlab inogara ichipa mazano ehunyanzvi epamusoro uye mhinduro dzezvigadzirwa zvakagadzirirwa vatengi veindasitiri. Isu tinopa simba vagadziri ve semiconductor kuti vawane goho rakakura, kudzokorora maitiro kuri nani, uye kuvimbika kwemidziyo kwenguva refu mukukura kwe epitaxial. Tinotarisira nemwoyo wese kuva mubatsiri wako wenguva refu muChina.