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Chinotenderedza TaC chakaputirwa
Semixlab's TaC Coated Rotation Susceptor igadziriso yepamusoro yesusceptor yakagadzirirwa kushandiswa kweSiC epitaxy inopisa zvakanyanya inoda kufanana kwakanyanya, kuchena, uye kugadzikana kwemaitiro. Iine tantalum carbide coating yakakora uye isina makemikari, susceptor inopa conductivity yepamusoro yekupisa, kuramba hydrogen etching, uye kugara kwenguva refu munzvimbo dzakanyanya dzeCVD dzinopfuura 1600°C. Dhizaini yayo yekutenderera yakagadziriswa inoita kuti kupisa kugoverwe nguva dzose uye kuyerera kwakafanana, zvichiita kuti ukobvu hweepitaxial layer hudzorwe zvakanyanya uye hufanane pakati pemawafers eSiC ane 6-inch ne8-inch. Tinotarisira kubvunza kwako.
tsananguro
Zvishandiso zvinotenderera zveSemixlab zvakagadzirwa neTaC-coated zvakagadzirwa zvakananga kuti zvisangane nezvinodiwa zveSiC epitaxial processes yechizvarwa chinotevera. Tekinoroji yedu yeTaC coating, pamwe chete nedhizaini yekutenderera yakanyatsorongeka, inopa kufanana kwakanaka kwekupisa munzvimbo dzeCVD dzinopisa zvakanyanya, inoderedza kugadzirwa kwezvikamu, uye inoita kuti maitiro acho agare kwenguva refu.
Pakati pechigadzirwa ichi pane tantalum carbide coating yakakora, isina makemikari inodzivirira graphite substrate kubva mukuora kwehydrogen, sublimation yekupisa kwakanyanya, uye mashandiro ane magasi epamberi ane silicon kana carbon. Nzvimbo yekunyunguduka yeTaC yakanyanya kukwira uye conductivity yekupisa yakasarudzika inoita kuti kupisa kuchinjike, kwakafanana panguva ye4H-SiC epitaxy, zvichitsigira tembiricha yekukura inodarika 1600-1700°C. Nekuchengetedza munda wekupisa wakadzorwa panguva yekutenderera kwewafer, substrate iyi inoita kuti kugoverwa kweprecursor kwakafanana, kuyerera kwelaminar kwakavandudzwa, uye kufanana kwakanyanya kwewafer muukobvu uye huwandu hwedoping. Izvi zvakakosha kune zvivakwa zvemagetsi zvakaita se drift layers, JBS epitaxial layers, kana gobvu high-voltage epitaxial stacks, uko kusiyanisa kwakafanana kunokanganisa zvakanyanya goho uye mashandiro emagetsi.
Substrate inotenderera yakaputirwa neTaC yakagadzirirwawo kudzora kusvibiswa, chimwe chezvinhu zvakakosha muSiC epitaxy. Nzvimbo yeTaC yakaoma kwazvo inodzivirira kutsemuka, kupwanyika, uye kupararira kunyangwe mushure mekufamba kwenguva refu, zvichideredza zvikuru kugadzirwa kwezvikamu mukati mekamuri reepitaxial. Hunhu hwayo hwemakemikari hwakagadzikana hunoderedza kuiswa kwetsvina yesimbi kana kabhoni, kuchengetedza kuchena kwefirimu reepitaxial uye kudzikisa defect density. Mabhenefiti aya anowedzera zvakanyanya nguva dzekugadzirisa, anowedzera nguva yekushanda kwekamuri, uye anowedzera kugadzirwa kwemidziyo yese - kunyanya munzvimbo dzekugadzira dzakawanda uko kuvimbika uye kudzokorora kunokanganisa zvakananga mutengo wese wekuva muridzi.
Kubva pamaonero einjiniya, dhizaini yeSemixlab inoshandisa chiyero chakakodzera chejometri, ukobvu hwekuvhara hwakagadziridzwa, uye matekiniki epamusoro ekurapa pamusoro kuti irambe ichishanda zvakanaka pasi pekupisa kwakanyanya. Izvi zvinowedzera kushanda zvakanaka kwekudziisa kwe induction ukuwo zvichidzikamisa kugoverwa kwekushisa kwe wafer mumamiriro akasiyana-siyana ekukura. Pakupedzisira, tinopa mhinduro yakakodzera ye substrate yekugadzira yakawanda uye R&D yepamusoro, tichiona kuti inoenderana nemapuratifomu eSiC epitaxial anotungamira uye kugona kukwirira kune ma process e wafer e 6-inch ne 8-inch.
Zvishandiso zvinotenderera zveSemixlab zvakagadzirwa neTaC zvinozoshanda senzira yakavimbika kwazvo yekushanda, zvichivandudza mhando ye epitaxial, zvichivandudza kushanda zvakanaka kwemidziyo, uye zvichitsigira mahwindo ekushanda anodiwa pakugadzira michina yemagetsi yeSiC yemazuva ano. Yakagadzirwa kuti igare kwenguva refu, iwane kusvibiswa kushoma, uye ishande zvakanaka pakupisa, chigadzirwa ichi chinhu chakakosha kune zvigadzirwa zvinotsvaga mhedzisiro yakagadzikana, inofungidzirwa, uye yepamusoro-soro yeSiC epitaxial.
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