High kuchena Isostatic Graphite

Yakakwira kuchena isostatic graphite imhando yeakakosha graphite zvinhu zvakagadzirirwa neinotonhora isostatic molding (CIP) uye yekupedzisira-yepamusoro tembiricha graphidification process (pamusoro 2800 ℃). Kabhoni yayo ndeye ≥99.9995%, tsvina yesimbi yakakosha (Fe, Ni, Cr) ≤0.3ppm, boron / phosphorus content ≤0.05ppm, ash content ≤5ppm. Sangana semiconductor giredhi yakachena mwero (SEMI F63). Chimiro chemukati chezvinyorwa ndeye-three-dimensional isotropic, saizi yezviyo yakafanana (D50 = 10-15μm), density ndeye 1.85-1.90g/cm³, uye ine ultra-high thermal conductivity (120-150W/m·K) uye yakanyanya kuderera kupisa kwekuwedzera kwekuwedzera, 4.0 × 10 × 6 × 20 × 1000 × 1600 × 500 × 1200 × XNUMX × XNUMX-XNUMX ℃). Inogona kushandiswa mu XNUMX ℃ inert mhepo kwenguva yakareba, uye huwandu hwekupisa kwekutenderera kutenderera kunodarika mazana mashanu nguva (XNUMX ℃↔ kamuri tembiricha inopinza shanduko).

Advanced kugadzira maitiro

Kucheneswa kwezvinhu

Kushandisa ultra-low sulfur petroleum coke se substrate, 99.9999% tsvina yesimbi yakabviswa neplasma kemikari yemhepo yekuchenesa tekinoroji, uye madota akaderedzwa kubva pakutanga 300ppm kusvika pasi pe5ppm nehydrochloric acid-hydrofluoric acid gradient pickling process.

Isostatic pressing molding

Mumvura yepakati ye200MPa yekupedzisira-yakanyanya kudzvanywa kwemaminetsi makumi matanhatu, iyo yakazara densification yehupfu zvimedu zvinoonekwa, iyo density yemhando kutsauka iri pasi pe60%, uye density gradient chikanganiso chechinyakare kuumba maitiro chakabviswa zvachose.

Ultra yakakwirira tembiricha graphitization

Kuenderera mberi graphitization yakaitwa kwemaawa 120 pasi pekuchengetedzwa kweargon gasi pa2800-3200 ℃. Iyo graphitization degree yaive ≥98%, iyo lattice layer spacing (d002) yakagadzikana pa0.3354-0.3360nm, uye isotropic rate (CTE anisotropy) yaive ≤3%.

Precision machining uye kurapwa kwepamusoro

Iyo inogadziriswa neshanu-axis CNC muchina chishandiso, iyo dimensional kurongeka i ± 0.01mm, uye kushata kwepamusoro Ra≤0.4μm. SiC kana TaC kemikari vapor deposition coatings (ukobvu 2-5μm) inosarudzika kudzikisa kuburitswa kwekushisa kwepamusoro volatils kusvika <1μg/cm²·h.

Core application mumunda we semiconductor

Thermal field system ye monocrystalline silicon kukura

Crucible uye heater: inoenderera ichishanda pa1600 ℃ munzvimbo yeargon kwemaawa 6000 pasina deformation, inotsigira 300mm wafer kukura axial tembiricha gradient ≤2℃/cm, lattice defect rate inokonzerwa nekusvibiswa kwekabhoni <0.05/cm².

Thermal insulation cylinder uye flow guide cylinder: porous gradient structure design (porosity 5-20% inogadziriswa), kupisa kwemwaranzi kunyatsoita kudzora kurongeka ±1.5%, inobatsira kudzora okisijeni yekamwe crystal silicon <10¹⁴ maatomu/cm³.

Ion implantation uye etching michina

Kutakura tireyi uye mhete yekutarisa: kusvibiswa kwesimbi yepasi ≤0.1ppb, kushivirira kusvika ku10¹⁶ ions/cm² dose bombardment, uye hupenyu hwesevhisi hwakapetwa katatu pane zvechinyakare.

Plasma electrode: electron emission stability deviation <0.5%, yakakodzera 5nm process etching uniformity zvinodiwa.

Epitaxial kukura kwekomboni semiconductors

MOCVD graphite base: GaN/SiC ukobvu inhomogeneity <± 1.5%, kuvharika kwepamusoro kunoderedza density inokonzerwa negraphite volatils kusvika <0.01/cm².

Tsva Yekukurumidza:

1. Mamwe mazita: Isostatically pressed graphite, isotropic graphite.

2. Kushandisa: Single crystal furnace thermal field, EDM electrode, photovoltaic silicon wafer graphite mold.

3. Core parameters: Kuchena ≥99.9995%, density 1.80-1.85g/cm³.

Monocrystalline silicon kukura kwevira inopisa munda musangano.

Electrodischarge machining (EDM) electrodes.

Graphite mold ye photovoltaic silicon wafer casting.

Indasitiri yepamusoro kuchena (5N giredhi), kuderedza maitiro kusvibiswa.

Isotropic chimiro, yunifomu mechanical properties.

Tsigira kunyatsoita machining kusvika ± 0.01mm kushivirira.