Silicon Carbide choto chubhu
| Nzvimbo Yokutanga: | China |
| Brand Name: | Semixlab |
| Model Number: | SCFT-01 |
| advertising: | ISO9001 |
| Minimum Order Yakawanda: | 1 Chikamu |
| Price: | Bata kune Customized quote |
| Packaging Details: | Anti-Static Foam + Plywood bhokisi (Customizable) |
| Nguva Yokutora: | 60-90 Mazuva Mushure meOrder Kusimbiswa |
| Mitemo Yekubhadhara: | T / T |
| Kupa Mikana: | 100 Units / Mwedzi |
tsananguro
Semixlab inopa Ultra-yakakwirira kuchena SiC furnace chubhu system, semiconductor-giredhi yemafuta emumunda mhinduro ine 99.9999% yekuputira kuchena uye Yakazara mutsara kuendesa.
Core value proposition
Ipa zero-kusvibiswa kwemafuta nharaunda yekugadzira wafer: 99.9% SiC kuchena kwe substrate + 99.9999% kuchena kweCVD coating, yakasanganiswa neSiC cantilever paddle yakazara & wafer boat system, kuwana zero simbi kusvibiswa mukamuri yekuita.
Mazita akasiyana ezvigadzirwa:
Tembiricha yakakwira SiC furnace chubhu;silicon carbide chubhu;Yakakwirira kuchena SiC chubhu;Silicon carbide chubhu ye diffusion furnace;Silicon carbide chubhu yekuparadzira &LPCVD process;SiC chubhu yeRTP,SiC chubhu yeoxidation
Core specifications:
Material kuchena: The base material is silicon carbide nekuchena kweinopfuura 99.9%, uye kuchena mushure meCVD coating inopfuura 99.9999% (6N giredhi).
Thermal performance: Maximum yekushanda tembiricha 1650 ℃ (yenguva refu), coefficient of thermal expansion: 4.6 × 10⁻⁶/℃, kufanana munzvimbo inogara tembiricha: ± 1.5℃ (1200℃);
Mechanical simba: Kupeta simba 450Mpa (pakamuri tembiricha).

Magadzirirwo
| Zvenyama zvimiro zveSintered Silicon Carbide | |
| pfuma | Kukosha kwechimiro |
| Chimiro Chimiro | SiC>99.9% |
| Kuwanda kwehuwandu | >3.07 g/cm³ |
| Inooneka porosityInooneka porosity | |
| Modulus yekuputika pa20 ℃ | 270 MPa |
| Modulus yekuputika pa1200 ℃ | 290 MPa |
| Kuoma pa20 ℃ | 2400 Kg/mm² |
| Kuputsika kusimba pa20% | 3.3 MPa · m1/2 |
| Thermal Conductivity pa1200 ℃ | 45 w/m .K |
| Thermal kuwedzera pa20-1200 ℃ | 4.6 × 10-6/℃ |
| Max.kushanda tembiricha | 1650 ℃ (nguva refu) |
| Thermal shock resistance pa1200 ℃ | Kugona |
Applications
Main kushandiswa
Thermal field carrier
Gadzira yakagadzikana uye yakafanana tembiricha munda mukati meiyo 1200 ℃ kusvika 1650 ℃ (musiyano wetembiricha munzvimbo inogara tembiricha iri ≤± 1.5 ℃)
Ita shuwa iyo thermodynamic mamiriro emaitiro senge diffusion, oxidation uye annealing.
Kusvibisa kuparadzanisa barrier
Vhara kupararira kweioni dzesimbi (zvakadai seFe/Ni/Cu, nezvimwewo) kuburikidza nepamusoro-kuchena zvinhu (zvakadai seSiC).
Dzivirira kusvibiswa kwepakati-pakati pemagasi ekugadzirisa uye nharaunda yekunze.
Gadzira gasi chiteshi
Nyatsodzora mafambiro ekuyerera uye kugovera kweanoita magasi (akadai seO₂/N₂/SiH₄, nezvimwewo)
Wana yunifomu gasi-chikamu maitiro pane wafer pamusoro (senge SiO₂ kukura).
Photovoltaic coating: Tsigira TOPCon/HJT cell PECVD process wafer transport.
Maitiro ekushanda
● Epitaxy
● Oxidation / Diffusion
● LPCVD/PECVD maitiro
● Anealing yeIII-V komputa semiconductors
Mhinduro kune indasitiri marwadzo mapoinzi
Mhinduro dzedu dzinogadzirisa marwadzo evatengi vedu:
1. High-temperature process particle kusvibiswa: 6N coating inovhara kusvibiswa kwemvura.
Kugara kutsiva SiC muzvikamu zvequartz kunowedzera kuramba kwecorrosion ne8 nguva.
2. CTE consistency dhizaini yekuwedzera kwekupisa kusawirirana kwezvikamu zvemunda wekupisa mumutsara wese weSiC zvinhu.
3. Ultra-yakakwenenzverwa pamusoro kurapwa kwesimbi kusvibiswa kuseri kwechimedu (Ra 0.2μm).
Kukwikwidza Kunobatsira
Yakakosha mabhenefiti echikamu tekinoroji yakatarwa:
1. SiC furnace chubhu - Base zvinhu kuchena: 99.9% sintered silicon carbide
▶ Thermal shock resistance inowedzerwa ne3 nguva (kukurumidza kutonhora> 1600 ℃)
Iyo coefficient yekuwedzera kwemafuta yakaderera se4.6×10⁻⁶/℃
Nanoscale coating - CVD deposition ye6N-giredhi yakakwirira-kuchena SiC (99.9999%)
▶ Kuvharira kupararira kwesimbi seFe neNi
▶ Hushasha hwepamusoro Ra <0.5μm
2. SiC wafer Boat - Inoenderana ne12-inch wafers
- Multi-layer mutoro-inotakura dhizaini
▶ 100% kupisa kunoenderana nemachubhu echoto
Iyo wafer kusvibiswa mwero ishoma pane 0.01 ppb
3. Cantilever paddle system - isostatic graphite substrate + SiC coating
- Otomatiki kurongeka kwechokwadi ± 0.1mm
▶ Creep kuramba hupenyu> 100,000 nguva
The kutapurirana vibration iri pasi pe5μm
Zvinokanganisa tekinoroji zvakakwirira
The Purity Revolution
Maviri-level protection system
Iyo base layer ndeye 99.9% SiC → kuvaka yakakwirira-yakasimba chimiro
Iyo 6N-level CVD-SiC mune inoshanda layer inoumba atomic-level yakavharwa.
chipingamupinyi
Kudzora kusachena: Na/K <0.1ppm, heavy metals <5ppb, inosangana nezvinodiwa zvemaitiro pazasi 28nm
System synergy zvakanakira
● Thermal munda kufanana: Triple thermal coupling dhizaini yechoto chubhu + wafer chikepe + paddle blade, musiyano wetembiricha munzvimbo inogara tembiricha (> 1200 ℃) iri ≤±1.5℃
● Hupenyu hwakapetwa kaviri: Mhinduro yese inowedzera hupenyu ne40% kana ichienzaniswa neiyo hybrid system, ine MTBA inodarika maawa 8,000.

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