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SiC Ceramics
Silicon-Carbide-choto-chubhu
Silicon-Carbide-choto-chubhu

Silicon Carbide choto chubhu


Nzvimbo Yokutanga: China
Brand Name: Semixlab
Model Number: SCFT-01
advertising: ISO9001
Minimum Order Yakawanda: 1 Chikamu
Price: Bata kune Customized quote
Packaging Details: Anti-Static Foam + Plywood bhokisi (Customizable)
Nguva Yokutora: 60-90 Mazuva Mushure meOrder Kusimbiswa
Mitemo Yekubhadhara: T / T
Kupa Mikana: 100 Units / Mwedzi
tsananguro

Semixlab inopa Ultra-yakakwirira kuchena SiC furnace chubhu system, semiconductor-giredhi yemafuta emumunda mhinduro ine 99.9999% yekuputira kuchena uye Yakazara mutsara kuendesa.

Core value proposition

Ipa zero-kusvibiswa kwemafuta nharaunda yekugadzira wafer: 99.9% SiC kuchena kwe substrate + 99.9999% kuchena kweCVD coating, yakasanganiswa neSiC cantilever paddle yakazara & wafer boat system, kuwana zero simbi kusvibiswa mukamuri yekuita.

Mazita akasiyana ezvigadzirwa:

Tembiricha yakakwira SiC furnace chubhu;silicon carbide chubhu;Yakakwirira kuchena SiC chubhu;Silicon carbide chubhu ye diffusion furnace;Silicon carbide chubhu yekuparadzira &LPCVD process;SiC chubhu yeRTP,SiC chubhu yeoxidation

Core specifications:

Material kuchena: The base material is silicon carbide nekuchena kweinopfuura 99.9%, uye kuchena mushure meCVD coating inopfuura 99.9999% (6N giredhi).

Thermal performance: Maximum yekushanda tembiricha 1650 ℃ (yenguva refu), coefficient of thermal expansion: 4.6 × 10⁻⁶/℃, kufanana munzvimbo inogara tembiricha: ± 1.5℃ (1200℃);

Mechanical simba: Kupeta simba 450Mpa (pakamuri tembiricha).

Magadzirirwo
Zvenyama zvimiro zveSintered Silicon Carbide
pfuma Kukosha kwechimiro
Chimiro Chimiro SiC>99.9%
Kuwanda kwehuwandu >3.07 g/cm³
Inooneka porosityInooneka porosity
Modulus yekuputika pa20 ℃ 270 MPa
Modulus yekuputika pa1200 ℃ 290 MPa
Kuoma pa20 ℃ 2400 Kg/mm²
Kuputsika kusimba pa20% 3.3 MPa · m1/2
Thermal Conductivity pa1200 ℃ 45 w/m .K
Thermal kuwedzera pa20-1200 ℃ 4.6 × 10-6/℃
Max.kushanda tembiricha 1650 ℃ (nguva refu)
Thermal shock resistance pa1200 ℃ Kugona
Applications

Main kushandiswa

Thermal field carrier

Gadzira yakagadzikana uye yakafanana tembiricha munda mukati meiyo 1200 ℃ kusvika 1650 ℃ (musiyano wetembiricha munzvimbo inogara tembiricha iri ≤± 1.5 ℃)

Ita shuwa iyo thermodynamic mamiriro emaitiro senge diffusion, oxidation uye annealing.

Kusvibisa kuparadzanisa barrier

Vhara kupararira kweioni dzesimbi (zvakadai seFe/Ni/Cu, nezvimwewo) kuburikidza nepamusoro-kuchena zvinhu (zvakadai seSiC).

Dzivirira kusvibiswa kwepakati-pakati pemagasi ekugadzirisa uye nharaunda yekunze.

Gadzira gasi chiteshi

Nyatsodzora mafambiro ekuyerera uye kugovera kweanoita magasi (akadai seO₂/N₂/SiH₄, nezvimwewo)

Wana yunifomu gasi-chikamu maitiro pane wafer pamusoro (senge SiO₂ kukura).

Photovoltaic coating: Tsigira TOPCon/HJT cell PECVD process wafer transport.

Maitiro ekushanda

● Epitaxy

● Oxidation / Diffusion

● LPCVD/PECVD maitiro

● Anealing yeIII-V komputa semiconductors

Mhinduro kune indasitiri marwadzo mapoinzi

Mhinduro dzedu dzinogadzirisa marwadzo evatengi vedu:

1. High-temperature process particle kusvibiswa: 6N coating inovhara kusvibiswa kwemvura.

Kugara kutsiva SiC muzvikamu zvequartz kunowedzera kuramba kwecorrosion ne8 nguva.

2. CTE consistency dhizaini yekuwedzera kwekupisa kusawirirana kwezvikamu zvemunda wekupisa mumutsara wese weSiC zvinhu.

3. Ultra-yakakwenenzverwa pamusoro kurapwa kwesimbi kusvibiswa kuseri kwechimedu (Ra 0.2μm).

Kukwikwidza Kunobatsira

Yakakosha mabhenefiti echikamu tekinoroji yakatarwa:

1. SiC furnace chubhu - Base zvinhu kuchena: 99.9% sintered silicon carbide

▶ Thermal shock resistance inowedzerwa ne3 nguva (kukurumidza kutonhora> 1600 ℃)

Iyo coefficient yekuwedzera kwemafuta yakaderera se4.6×10⁻⁶/℃

Nanoscale coating - CVD deposition ye6N-giredhi yakakwirira-kuchena SiC (99.9999%)

▶ Kuvharira kupararira kwesimbi seFe neNi

▶ Hushasha hwepamusoro Ra <0.5μm

2. SiC wafer Boat - Inoenderana ne12-inch wafers

- Multi-layer mutoro-inotakura dhizaini

▶ 100% kupisa kunoenderana nemachubhu echoto

Iyo wafer kusvibiswa mwero ishoma pane 0.01 ppb

3. Cantilever paddle system - isostatic graphite substrate + SiC coating

- Otomatiki kurongeka kwechokwadi ± 0.1mm

▶ Creep kuramba hupenyu> 100,000 nguva

The kutapurirana vibration iri pasi pe5μm

Zvinokanganisa tekinoroji zvakakwirira

The Purity Revolution

Maviri-level protection system

Iyo base layer ndeye 99.9% SiC → kuvaka yakakwirira-yakasimba chimiro

Iyo 6N-level CVD-SiC mune inoshanda layer inoumba atomic-level yakavharwa.
chipingamupinyi

Kudzora kusachena: Na/K <0.1ppm, heavy metals <5ppb, inosangana nezvinodiwa zvemaitiro pazasi 28nm

System synergy zvakanakira

● Thermal munda kufanana: Triple thermal coupling dhizaini yechoto chubhu + wafer chikepe + paddle blade, musiyano wetembiricha munzvimbo inogara tembiricha (> 1200 ℃) iri ≤±1.5℃

● Hupenyu hwakapetwa kaviri: Mhinduro yese inowedzera hupenyu ne40% kana ichienzaniswa neiyo hybrid system, ine MTBA inodarika maawa 8,000.

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