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Machubhu echoto ane CVD akafukidzwa
Machubhu eSemixlab CVD SiC Coated Furnace akagadzirwa kuti ashandiswe mukugadzirisa ma semiconductor thermal systems epamusoro apo kuchena kwezvinhu, kugadzikana kwekupisa, uye kuramba kwemakemikari zvakakosha pakushanda kweprocess uye kubereka kwemidziyo. Machubhu aya efurnace akagadzirwa achishandisa high-purity isostatic graphite substrates, uye anosimbiswa ne dense chemical vapor deposited (CVD) silicon carbide coating. Mumasystem epamusoro ekugadzirisa ma thermal, anosanganisira diffusion, oxidation, epitaxy, uye SiC/GaN crystal growth equipment, machubhu efurnace eSemixlab anoshanda sezvinhu zvakakosha pakuchengetedza kufanana kweprocess uye kudzora kusvibiswa. Tinogamuchira kubvunza kwenyu.
tsananguro
KuSemixlab, tine hunyanzvi mukupa maCVD SiC Coated Furnace Tubes anoshanda zvakanaka akagadzirirwa nzvimbo dzinoda kugadzirwa kwema semiconductor. Tichibatanidza substrate ine simba guru neChemical Vapor Deposited (CVD) Silicon Carbide coating yakachena kwazvo, machubhu edu efurnace anopa kugadzikana kwakanyanya kwekupisa, kuramba ngura, kudzora kusvibiswa, uye hupenyu hurefu hwebasa.
Yakagadzirirwa kushandiswa kwepamusoro-soro mukugadzirisa kupisa, machubhu eSemixlab CVD SiC akafukidzwa nefurnace anoshandiswa zvakanyanya mumidziyo yekuparadzira, masisitimu eoxidation, epitaxy reactors, michina yekukura kwekristaro yeSiC, uye masisitimu ekugadzirisa vacuum anodziya zvakanyanya.
Chii Chinonzi CVD SiC Coated Furnace Tubes?
Chubhu yefurnace yakafukidzwa neCVD SiC chimiro chakagadzirwa ne substrate yakagadzirwa zvakanyatsosarudzwa (High-Purity Isostatic Graphite) yakafukidzwa ne dense layer ye high-purity Silicon Carbide (SiC) kuburikidza neChemical Vapor Deposition technology.
Pakati pezvinhu izvi, girafiti ye isostatic yakachena kwazvo yakasanganiswa neCVD SiC coating inozivikanwa zvakanyanya seimwe yemhinduro dzinoshanda kwazvo dzemidziyo ye semiconductor thermal processing. Hunhu hwemuviri hweCVD SiC Coated Furnace Tubes
Pamusoro peSilicon Carbide Yakachena Kwazvo
Chimiro cheCVD SiC chinopa zvinotevera:
● Kuchena kwakanyanya uye kusvibiswa kwesimbi kwakaderera zvakanyanya
● Hunhu hudiki husina maburi hwakakora, husina maburi
● Kudzivirira kwakanaka kwe oxidation
● Kudzivirira kwakanyanya magasi anoparadza
● Kubudirira kwekugadzira zvidimbu zvishoma
● Chikamu cheGraphite Chinotsveyama Chakanyanya Kuchena
Iyo Isostatic Graphite substrate inobatsira:
● Kufambisa kwakanaka kwazvo kwekupisa
● Kugoverwa kwekupisa kwakafanana
● Kudzivirira kupisa kwakanyanya
● Kushushikana kwekuwedzera kwekupisa kushoma
● Chimiro chakareruka asi chakasimba nekanika
Musanganiswa uyu unogonesa machubhu emoto kuti ashande zvakanaka munzvimbo dzinopisa zvakanyanya kupfuura 1400°C ukuwo achichengetedza kugadzikana kwehukuru uye kuchena kwemaitiro.
Sei Uchifanira Kusarudza Semixlab?
Semixlab yakatarisana nekupa zvinhu zvepamusoro uye zvikamu zvakanyatsonaka zvemidziyo yekugadzira semiconductor.
Masimba edu anosanganisira:
● Unyanzvi muzvinhu zve semiconductor thermal process
● Kugadzirwa kwegraphite yakachena uye SiC component
● Tekinoroji yepamusoro yekuputira CVD
● Mhinduro dzeinjiniya dzakagadzirwa nemaoko
● Hunhu hwakagadzikana uye chain yezvigadzirwa yakavimbika
● Rutsigiro rweSiC, GaN, silicon, uye mashandisirwo e semiconductor akagadzirwa nemakemikari
Nekubatanidza ruzivo rwesainzi yezvinhu neruzivo rweindasitiri ye semiconductor, Semixlab inobatsira vatengi kuvandudza kugadzikana kwemaitiro, kuderedza njodzi dzekusvibiswa, uye kuwedzera hupenyu hwebasa remuchina.
Kunyangwe uri kugadzira ma "diffusion furnaces", epitaxy reactors, SiC crystal growth systems, kana michina yepamusoro yekugadzirisa kupisa, Semixlab inopa mhinduro dzeCVD SiC coated furnace tube dzakagadzirirwa kusangana nezvinodiwa zvemazuva ano zvekugadzira semiconductor.
Bata Semixlab nhasi kuti mukurukure zvinodiwa pakushandisa kwako uye kuti muone kuti machubhu edu eCVD SiC coated furnace ane giredhi re semiconductor anogona sei kusimudzira mashandiro ako uye kuvimbika kwekushanda.
Magadzirirwo
| Basic zvemuviri zvimiro zveCVD SiC coating | |
| pfuma | Kukosha kwechimiro |
| Chigadzirwa cheCrystal | FCC β phase polycrystalline, kunyanya (111) yakatarisana |
| Density | 3.21 g / cm³ |
| neukukutu | 2500 Vickers kuoma (500g mutoro) |
| Kukura kweGrain | 2 ~ 10μm |
| Kemikari Kuchena | 99.99995% |
| Kupisa Unyanzvi | 640 J·kg-1·K-1 |
| Sublimation Temperature | 2700 ° C |
| Flexural Simba | 415 MPa RT 4-poindi |
| Young's Modulus | 430 Gpa 4pt bend, 1300 ℃ |
| Thermal Kuitisa | 300Wm-1·K-1 |
| Kuwedzera kweThermal (CTE) | 4.5 × 10-6K-1 |
Applications
Zvishandiso muSemiconductor Manufacturing
Kubatanidzwa kwe substrate ine purity yakanyanya uye dense CVD silicon carbide coating kunoita kuti machubhu aya efurnace ashande zvakavimbika mumhando dzakasiyana dzema semiconductor manufacturing process. Mu diffusion uye thermal oxidation systems, SiC-coated surface inopa simba rakanaka kumhepo inopisa uye inopisa uku ichideredza kugadzirwa kwezvikamu uye kusvibiswa kwesimbi. Kuderera kwe porosity uye chemical inertness yeCVD SiC layer zvinobatsira kuchengetedza process inoenderana panguva yekugadzirwa kwenguva refu.
Mukushandiswa kwekukura kwe epitaxial, kusanganisira silicon, silicon carbide (SiC), uye kugadzirwa kwe compound semiconductor, kuchena kwechubhu yefurnace uye kugadzikana kwekupisa zvakakosha kuti pave neyakajairwa firimu uye mhedzisiro inodzokororwa. Kuvhara kwe dense SiC kunoshanda sechidziviriro chekudzivirira kubva kumagasi e corrosive process ukuwo kuchichengetedza hunhu hwekupisa hunodiwa kuti kudzorwe tembiricha chaiyo mukamuri rese reactor.
Pakugadzira michina yemagetsi ine simba repamusoro, kunyanya mukugadzira michina yeSiC neGaN, machubhu eCVD SiC akafukidzwa nefurnace anobatsira mukuvandudza kugadzikana kwenzvimbo yekupisa, kuderedza njodzi dzekusvibiswa, uye kuvimbika kwemidziyo. Kugona kwavo kutsungirira kupisa kakawanda pasi pemamiriro ekupisa kwakanyanya uye vacuum kunoita kuti ive mhinduro inofarirwa yemasisitimu ekukura kwekristaro, michina yeannealing, nezvimwe zvishandiso zvakakosha zvekugadzirisa kupisa.
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