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SiC Ceramic Robotic Arm
Seanotungamira SiC Ceramic Robotic Arm mugadziri uye mutengesi muChina, iyo SiC Ceramic Robotic Arm neSemixlab Semiconductor ndiyo yakanyatso-engineered mhinduro ye-yakachena-yakachena wafer inobata mu advanced semiconductor kugadzira. Yakagadzirwa kubva kune yakakwira-kuchena Silicon Carbide (SiC), Yakanakira CVD, Etch, Ion Implantation, Oxidation, uye SiC/GaN Power Chishandiso kugadzirwa, ruoko rwerobhoti urwu runoderedza kusvibiswa, rinowedzera goho, uye rinowedzera hupenyu hwemidziyo uye rinounza kusingaenzaniswi kunyatsojeka, kuchena, uye kuvimbika kwemaitiro ekugadzirisa anotevera. Tinotambira kubvunza kwenyu.
Applications
Maitiro Ekushandisa
Iyo SiC Ceramic Robotic Arm kubva kuSemixlab Semiconductor yakagadzirirwa kuunza kuvimbika kusingaenzaniswi uye kuchena mumatanho akawanda e semiconductor wafer processing. Chishandiso chayo chinotambanudzira kubva kumberi-kumagumo kuenda kumashure-kumagumo maitiro, uko iko kurongeka, kusvibiswa kwekudzora, uye kutendeseka kwezvinhu zvinonyanya kukosha.
Mukubata kwewafer uye kutamisa masisitimu, iyo SiC robhoti ruoko inovimbisa yakagadzikana uye chidimbu-isina kufamba kwemawafer pakati pemakamuri ekutsvaira, mitoro yekutakura, uye maFOUPs. Iyo yakanyanya-yakapfava, girazi-yakakwenenzverwa pamusoro inodzivirira diki-kukwenya uye inobvisa kusvibiswa kwechikamu panguva yekumhanya-mhanya kwerobhoti. Kugadzikana kwayo kwakadzika pasi pevacuum uye kushushikana kwekupisa kunoibvumira kuchengetedza sub-millimeter yekumisikidza kurongeka, izvo zvakakosha kune otomatiki wafer kurongeka uye advanced lithography kugadzirira.
Munguva yeCVD uye PECVD maitiro, ruoko runoratidza kupikisa kwakasarudzika kunharaunda dzeplasma uye magasi anoshanda seCl₂ neHF, achibvumira kushandiswa kwakananga mumasisitimu ekuisa anobata silicon, SiC, kana GaN wafers. Kunyangwe pasi pekuratidzwa kwenguva refu kune tembiricha iri pamusoro pe1000 ° C, iyo SiC ceramic chimiro inochengetedza simba rayo remuchina uye geometry, ichipa yakavimbika wafer kutamiswa mukati nekubuda kwepamusoro-tembiricha maitiro emakamuri ane kushomeka kwekugadzirisa nguva.
Mune etching uye ion implantation modules, ruoko rweSiC runoshanda zvisina mhosva mune hukasha halogen plasma atmospheres uko simbi kana polymer-based components zvingangoshatisa. Ikemikari inertness yayo inodzivirira corrosion uye particle dedding, kuve nechokwadi chekugadzikana kwenguva refu uye yakagadziridzwa chishandiso uptime. Saizvozvo, panguva yeoxidation, annealing, uye diffusion maitiro, ruoko rwakaderera kupisa kwekuwedzera coefficient inodzivirira deformation uye inochengetedza wafer kurongeka kwechokwadi kunyangwe tembiricha yakanyanyisa bhasikoro.
Iyo SiC ceramic robhoti ruoko zvakare yakagamuchirwa zvakanyanya muCMP, kuchenesa, uye post-maitiro maapplication, uko zvese kuenderana kwemakemikari uye ekupedzisira-yakachena nzvimbo zvinhu zvakakosha. Iyo inopikisa acidic uye alkaline yekuchenesa maajenti, inodzivirira ionic leaching, uye inobvisa kusvibiswa kwesimbi-inobatsira pakuvandudzwa kwemhando yewafer uye kuderedza kuremara.
Chekupedzisira, muSiC neGaN simba semiconductor kugadzira, iyi robhoti ruoko inova yakakosha kugonesa yeinotevera-yakafara bandgap zvishandiso. Kuenderana kwayo kwezvinhu neSiC epitaxial wafers uye high-temperature reactors inoderedza kusvibiswa kwemuchinjiko, inosimudzira kuenderana kwemaitiro, uye inotsigira shanduko yeindasitiri kune yakakwirira-inoshanda, ine simba-inoshanda michina. Kunyangwe iri muvacuum transfer, epitaxy, kana yakakwirira-tembiricha anneal masisitimu, iyo Semixlab SiC Ceramic Robotic Arm inova nechokwadi chechokwadi, kuchena, uye hupenyu hurefu pasi peiyo inonyanya kudiwa semiconductor process mamiriro.
Zvishandiso Mhiri Semiconductor Mitsetse
● 200mm / 300mm wafer processing platforms
● SiC / GaN simba rekugadzira mudziyo
● High-temperature vacuum transfer systems
● LPCVD, PECVD, Epi, uye RTP midziyo
Kukwikwidza Kunobatsira
Core Material Advantage
Yakavakwa kubva kune yakakwirira-density sintered SiC ceramics, iro robhoti ruoko inopa:
● Thermal kugadzikana kusvika 1200 ° C yevira uye epitaxial maitiro.
● Kunyanya kupikisa makemikari kuHF, Cl₂, O₃, uye mamwe magasi ane hukasha.
● Ultra-yakachena mashandiro ane diki diki chizvarwa, yakanakira Kirasi 1 nharaunda.
● Kuderera kwekuwedzera kwekushisa kunovimbisa kurongeka kwe-sub-millimeter yakarurama.
● Optional conductive SiC coating ye ESD kudzivirira uye electrostatic discharge control.
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