Etching Focus mhete

Mune epakati semiconductor yekugadzira maitiro akadai seCVD kemikari vapor deposition, etching, uye yakaonda firimu deposition, Etching Focus Ring (Etching Focus Ring), Electrode (Electrode), ETC (Edge Temperature Controller) uye zvimwe zvinodyiwa zvinoumba zvinhu zvakakosha kuti ive nechokwadi chekuita chokwadi uye kugadzikana. Izvi zvikamu zvakanyatsounganidzwa mukamuri yekutsvaira kuti iwane machining mayunifomu ezvimiro zvenanoscale pane wafer pamusoro kuburikidza nekudzora kwakaringana kwekugovera kweplasma, tembiricha yemupendero uye kufanana kwemunda wemagetsi.

Mukupindura kune zvakaomesesa zvinodikanwa zvehutsanana uye kugadzikana mune yepamusoro-yekupedzisira maitiro (akadai se5nm uye pazasi), Semixlab yakaunza etched inotarisisa mhete uye inotsigira inodyiwa ine yakakwirira-kuchena Monocrystalline Silicon sechinhu chakakosha, zvichienzaniswa neyechinyakare Quartz zvinhu. Kubudirira mukusagadzikana kwekuora, kugadzikana kwekupisa uye dielectric zvivakwa.

Core zvinhu kuenzanisa: monocrystalline silicon vs. Quartz

1. Plasma corrosion resistance

Monocrystals. Zvakanyanya kuenderana newafer base material, vakaratidza yakaderera etching mazinga mufluorine-based (CF₄, SF₆) kana chlorine-based (Cl₂) plasma nharaunda uye vakararama kusvika 3-5 nguva kureba sequartz, kuderedza michina kuderera uye kutsiva frequency.

Quartz: Kunyangwe iine yakanaka kupisa tembiricha kuramba, zviri nyore kuumba micro-cracks pasi pepamusoro-energy ion bombardment, zvichikonzera njodzi yakawedzera yekusvibiswa kwechikamu, kunyanya mukuita kwenguva refu etching.

2. Thermal conductivity uye thermal kuwedzera coefficient

Monocrystalline silicon: iyo thermal conductivity (149 W/m·K) yakanyanya kukwirira kupfuura iyo yequartz (1.4 W/m·K), inogona kukurumidza kuitisa kupisa uye kuderedza kushushikana kwenzvimbo. Iyo yakaderera coefficient yekuwedzera kwekupisa (2.6 × 10⁻⁶/K) inoenderana nesilicon wafers kudzivirira chikamu deformation nekuda kwekushanduka kwekushisa.

Quartz: yakaderera kupisa conductivity, nyore kugadzira tembiricha gradient mukamuri, inokanganisa plasma kufanana; Iyo yekupisa yekuwedzera coefficient (0.55 × 10⁻⁶/K) yakasiyana zvakanyanya neyewaferi, izvo zviri nyore kukonzera micro-displacement yezvikamu pasi penguva refu yekupisa.

Dielectric zvivakwa uye maitiro akarurama

Monocrystal silicon: Yakanyanya kuderera dielectric kurasikirwa (tanδ <0.001), iyo RF yemagetsi kugovera munda inogona kurongeka nenzira kwayo kuti ive nechokwadi chekuti mupendero wepakati peiyo wafer etching chiyero musiyano uri pasi pe1.5%, ichisangana nezvinodiwa zvepamberi maitiro ekufanana kwemutsara.

Quartz: The dielectric constant (3.8) yakasiyana nesilicon-based environment, iyo inotungamira nyore nyore kumagetsi emagetsi, uye kumucheto kwakakosha kwakakosha, iyo inokanganisa kuumba kuwirirana kwehupamhi hwehuwandu hwehutano.

Sei uchisarudza monocrystalline silicon?

Mumaitiro epamberi ari pazasi pe7nm, Window Yekuita yakapfupikiswa kusvika pachiyero cheatomu, uye iyo pfupi yehupenyu ndiro uye yemagetsi kupindira kwemunda wezvigadzirwa zvechinyakare zvequartz zvave mabhodhoro egoho. Iine yemuviri uye kemikari homology ine mawafers, monocrystalline silicon zvinhu zvinogona kuderedza zvakanyanya kukanganiswa kweinterface, kuwedzera kutenderera kutenderera kusvika maawa anopfuura zviuru zvitatu, uye kuderedza mutengo wese ne3,000%.

Tsva Yekukurumidza:

1. Mamwe mazita: Focus ring,Etching ring,Focus ring for etching,Monocrystalline silicon inotarisa mhete.

2. Kushandisa: Isoconsumable components zvinhu zvakakosha kuti zvive nechokwadi chekugadzirisa uye kugadzikana. Izvi zvikamu zvakanyatsounganidzwa mukamuri yekutsvaira kuti iwane machining mayunifomu ezvimiro zvenanoscale pane wafer pamusoro kuburikidza nekudzora kwakaringana kwekugovera kweplasma, tembiricha yemupendero uye kufanana kwemunda wemagetsi.

3. Core parameters: Thermal conductivity (149 W / m·K), inogona kukurumidza kuitisa kupisa kwemaitiro, kuderedza kushushikana kwekupisa kwenzvimbo; Iyo yakaderera coefficient yekuwedzera kwekupisa (2.6 × 10⁻⁶/K) inoenderana nesilicon wafers kudzivirira chikamu deformation nekuda kwekushanduka kwekushisa.

Technical data kuenzanisa

HAR Etching: Mu 3D NAND uye TSV (kuburikidza nesilicon) maitiro, yakagadzikana kuchengetedza kweyakadzika gomba padivi pemadziro perpendicality.

Atomic Layer etching (ALE) : Kubviswa kweatomu imwe chete yakaturikidzana nemagetsi chaiwo ekudzora munda kuti usanyanya-etching.

Compound semiconductor kugadzirisa: Yakaderera defect rate etching inoenderana neyakakura bhendi gap zvinhu zvakaita seGaN neSiC.

Zero kusvibiswa vimbiso: Iyo monocrystalline silicon zvinhu ndeye Ultra-chaiyo yakakwenenzverwa (Ra <0.1μm) uye Kirasi 10 yakachena kamuri pasuru kudzivirira kuburitswa kwezvinhu uye kusangana ne semiconductor giredhi rehutsanana mwero (SEMI F47).

Hungwaru tembiricha yekudzora dhizaini: Yakabatanidzwa ETC module, chaiyo-nguva yekutarisa uye kugadziridzwa kwemupendero tembiricha kuburikidza yakamisikidzwa thermocouple, muripo we process chamber thermal drift, kuve nechokwadi chekudzokorora batch.

Customized kugarisana: Tsigiro yakasarudzika aperture uye ukobvu zvinoenderana nemutengi chiteshi modhi (seAMAT Centura, Lam Research Kiyo), kune akasiyana siyana eplasma masosi (ICP, CCP).