Mhete Yakafukidzwa neTaC yeSiC Epitaxial Reactor

Muma "silicon carbide epitaxial reactors", tembiricha dzekushanda dzinopfuura 1600 °C pasi pemhepo ine hydrogen yakawanda uye chlorine. Kushanda kwezvikamu zve "boundary" ne "edge control components" kunokanganisa zvakananga kunaka kwe "epitaxial layer", kugadzikana kwe "good coating", uye nguva yekushanda kwemidziyo. Semixlab's tantalum carbide (TaC) coating rings dzakagadzirwa zvakananga kuti dzisangane nezvinodiwa izvi munzvimbo dzekugadzirwa kwe "mass". Mhete idzi dzinoshanda sezvikamu zvakakosha zve "high-temperature functional" zveSiC epitaxial reactors, zvichivimbisa kugadzikana kwenguva refu kwe "process", kukura kwakafanana kwe "epitaxial", uye kuchena kwe "reactor".

Mumaitiro eSiC epitaxy, mhete dzekuvhara dzetantalum carbide (TaC) dzinoiswa pedyo nemipendero yewafer kana munzvimbo dzekuchinja kwereactor kuti dzifambe zvakanaka uye dziite kuti mvura ifambe zvakanaka. Basa radzo guru nderekugadzirisa magiraidi ekupisa emunharaunda uye maitiro evapor-phase reaction pamipendero yewafer—nzvimbo dzinowanzo sangana neparasite isingadzoreki uye dzisina kufanana mumipendero. Nekunyatsotsanangura miganhu ye reaction uye kudzvinyirira kusada kwesilicon necarbon deposition, mhete idzi dzekuvhara dzinowedzera kunaka kweukobvu hweepitaxial uye kugadzikana kwedopant kune mawafer eSiC ane dhayamita yakakura.

Semixlab yakasarudza tantalum carbide coating nekuda kwekugadzikana kwayo kwakanyanya kwekupisa, kusagadzikana kwemakemikari, uye kuramba ngura ye halide. Nenzvimbo yekunyunguduka inodarika 3880 °C uye inoenderana zvakanaka neH₂, HCl, nemamwe makemikari anoparadza anowanzo shandiswa mu silicon carbide epitaxy processes, TaC inodzivirira zvinobudirira substrate iri pasi kubva mukukukurwa uye kuora kwechimiro. Iyi purasitiki ye coating ine density yakakura, yakaderera-porosity inoderedza kugadzirwa kwezvikamu, inoderedza njodzi ye microcracks kana delamination, uye inoita kuti reactor igare yakagadzikana panguva yekushanda kwenguva refu.

Zvichienzaniswa nemhinduro dzechinyakare dzesilicon carbide kana graphite susceptor, Tantalum Carbide Coating inodzivirira kupera nekuora zvakanyanya inowedzera hupenyu hwechikamu, nokudaro ichideredza nguva yekugadzirisa uye kutenderera kwemaitiro kunoenderana nekutsiviwa kwechikamu. Kubva pamaonero emari yekugadzira, rin'i yeTantalum Carbide Coating inowedzera kudzokorora kwemaitiro uye kushanda zvakanaka kwemari. Kune mitsetse yekugadzira epitaxial ine simba rakawanda uye kugadzirwa kwemidziyo yemagetsi yepamusoro, kugadzikana uku kunoreva goho rakawanda, kushandiswa kwemidziyo kuri nani, uye mitengo shoma yekugadzira.

Sekambani inotungamira tekinoroji muChina muchikamu che semiconductor epitaxial process, Semixlab ine hunyanzvi hwakadzama mu tekinoroji yepamusoro ye coating uye zvinhu zve semiconductor process. TaC Coated Ring yedu yeSiC Epitaxial Reactor inovimbiswa kugadzirwa uye kugadzirwa pasi pemitemo yakasimba yekudzora mhando. Semixlab inoramba yakazvipira kupa tekinoroji yemazuva ano uye mhinduro dzakagadzirirwa TaC Coated Ring yeSiC Epitaxial Reactor kuindasitiri ye semiconductor. Tinotarisira nemwoyo wese kuva mubatsiri wako wenguva refu muChina.