Kukura kwePVT Silicon Carbide Crystal: Zvinhu Zvepamusoro Zvinoshandiswa Pakugadzira Crystal yeSiC Inobereka Zvikuru

Sezvo indasitiri yepasi rose yemagetsi e semiconductor ichikurumidzisa kushandiswa kwemidziyo ye silicon carbide (SiC) yekushandisa mumotokari dzemagetsi, masisitimu esimba rinodzokororwa, uye mumaindasitiri ane simba rakawanda, kudiwa kwemidziyo yeSiC ine dhayamita yakakura, isina zvikanganiso zvakawanda kuri kuramba kuchikura. Tekinoroji yekukura kwe PVT silicon carbide crystal ndiyo iri pakati pekuchinja uku kwekugadzira uye ndiyo nzira huru yekugadzira makristaro emhando yepamusoro e4H-SiC single emidziyo yemagetsi yechizvarwa chinotevera.

Matambudziko Makuru Ari Kutarisana Nemazuva Ano ePVT Silicon Carbide Crystal Growth Systems

Pasinei nekukura kwemakumi emakore, kukura kwePVT silicon carbide crystal kunoramba kuri imwe yenzira dzakaoma zvikuru mukugadzirwa kwema semiconductor. Kukura kwekristaro kunoitika munzvimbo yakavharwa, inodziya zvakanyanya kupfuura 2000°C, uko zvinhu zvesilicon carbide zvinodzika pasi pemvura uye zvinodzokera kumakristaro embeu pasi pemazinga ekupisa akanyatsodzorwa. Mumamiriro ezvinhu akadaro akaipisisa, kunyangwe kuchinja kudiki mukugoverwa kwekushisa, kinetics yekufambisa kwemhepo, kana kuchena kwezvinhu zvinogona kukanganisa zvakanyanya chimiro chekristaro, kugadzikana kwepolymorph, uye kuumbwa kwezvikanganiso.

Chimwe chezvinetso zvikuru mukukura kwePVT SiC crystal ndiko kugadzikana kwenguva refu kwemunda wekupisa. Zvikamu zvegirafiti zvechinyakare zvinogara zvichisangana neutsi hune silicon hunoshanda zvakanyanya, hwakadai seSi, Si₂C, uye SiC₂. Munguva yekushanda kwenguva refu, utsi uhu hunosangana nepamusoro pegirafiti, zvichikonzera kukanganiswa kwezvinhu zvishoma nezvishoma, kuchinja kwechimiro, uye kukanganisa kwekugoverwa kwetembiricha yakagadzirwa. Sezvo geometry yenzvimbo yekupisa ichichinja, zvinova zvakaoma kudzora mamiriro epamusoro-soro pamusoro penzvimbo yekukura, izvo zvinowanzo tungamira mukukura kwekristaro kusina kugadzikana, kuderera kwekukura, uye kuwedzera kwehurema.

Kuchena kwezvinhu zvakare chinhu chakakosha chinodzivisa. Huwandu hwenitrogen, boron, aluminium, titanium, nezvimwe tsvina yesimbi inowanikwa muzvinhu zvemazuva ano zvinopisa zvinopararira muchikamu cheutsi panguva yekushanda kwekupisa kwakanyanya. Kana tsvina iyi yapinda mukristaro iri kukura, inochinja huwandu hwecarrier, resistivity, uye maitiro ekubhadhara mukati me4H-SiC lattice. Chinonyanya kukosha ndechekuti, zviitiko zve nucleation zvinotungamirirwa nekusvibiswa zvinokurumidzisa kuumbwa kwema microtubes, basal plane dislocations (BPDs), screw-type dislocations (TSDs), nezvimwe zvikanganiso zvechimiro, izvo zvinokanganisa zvakananga kuwafer goho uye kuvimbika kwemidziyo iri pasi.

Sezvo vagadziri vesilicon carbide (SiC) vachichinja kubva pakugadzirwa kwewafer ye 6-inch kuenda kukugadzirwa kwewafer ye 8-inch, zvinodiwa kuti thermal field stability irambe yakakura zvakawedzerawo zvakanyanya. Magirazi makuru anoda kukura kwenguva refu, kufanana kwakasimba kwe radial tembiricha, uye kudzora zviri nani thermal stress. Masisitimu e thermal field echinyakare anowanzo tambura kuchengetedza kugadzikana kunodiwa kuti crystal ikure ne dhayamita hombe, zvichikonzera mitengo yepamusoro yekushanda uye kudzikira kwekushanda kwekugadzira.

Zvinhu Zvepamusoro Zvinoshandiswa Pakudziya Kwemvura zvePVT Silicon Carbide Crystal Growth

1. Mafuro eCVD TaC ekudzivirira kupisa kwakanyanya

Kuti tigadzirise matambudziko aya, hunyanzvi hwepamusoro hwekugadzira maindasitiri ekupisa hwave chinhu chakakosha mukukura kwemakristaro ePVT silicon carbide emazuva ano. Imwe yenzira dzinobudirira zvikuru munzvimbo iyi ndeyekuiswa kwe chemical vapor deposition (CVD) tantalum carbide (TaC) coatings. Nepoindi yekunyunguduka inosvika 3880°C uye kuramba kwakanaka kunzvimbo dzine utsi hwakapfuma musilicon, TaC inoshanda sechidziviriro chinoshanda pakati pemagasi ekugadzirisa mashandiro uye graphite substrates. Machira eTaC anodzivirira kushandiswa kwegraphite uye kuchengetedza kugadzikana kwejometri panguva yekukura kwenguva refu, nokudaro zvichibatsira kuchengetedza thermal field symmetry uye kutsigira kinetics yekukura kwekristaro yakagadzikana.

2. High-Purity 7N Silicon Carbide Feedstock yekuderedza Zvikanganiso Zvakakwana

Imwe nzira huru yekushandisa zvinhu zveSiC zvakachena zvakanyanya zvakagadzirwa kuburikidza ne chemical vapor deposition (CVD). Zvichienzaniswa nezvikafu zveAcheson-process, upfu hweSiC hwakagadzirwa neCVD hune huwandu hwakaderera hwenitrogen nesimbi. Nekuchena kwakakwira kusvika 7N (99.99999%), chinhu ichi chinogonesa kudzora kwakanyatsojeka kwehuwandu hwemhepo panguva yekuisa pasi, zvichideredza mukana wekubatanidzwa kwetsvina ukuwo zvichivandudza kunaka kwekristaro uye mashandiro emagetsi. Izvi zvinhu zvakachena zvakanyanya zviri kuzivikanwa sechinhu chakakosha chekugadzira zvinhu zvisina hurema hunoshandiswa mumidziyo yeSiC ine voltage yakawanda uye mota.

3. Zvivako zveGraphite Zvakagadzirwa Nemajini

Kugadziriswa kwenzvimbo yekupisa kunowedzerwawo nechimiro chegrafiti che microporous chakagadzirwa zvakanaka kuti chidzore kufambiswa kwekupisa negasi mukati menzvimbo inopisirwa mvura. Nekudzora kupararira kwema porosity uye thermal conductivity, zvikamu izvi zvinobatsira kugadzira tembiricha yakafanana uye kuderedza kusagadzikana kwe convective. Nekuda kweizvozvo, ma ingots esilicon carbide ane dhayamita yakakura anoratidza kukura kwakasimba, kuunganidzwa kwekupisa kwakaderera, uye kuvandudzwa kwechimiro.

4. Rutivi Runodzivirira rwePyrolytic Carbon (PYC)

Kuwedzera kune matekinoroji aya, dense pyrolytic carbon (PYC) coating inowedzera kudzivirira kuumbwa kwezvikamu uye kunyudzwa kwegasi. Maumbirwo ayo ekabhoni akarongeka zvikuru anoita nzvimbo isina maburi, zvichideredza kusvibiswa mukati mekamuri yekukura ukuwo zvichiwedzera kugara kwenguva refu kwechikamu panguva yekupisa kunodzokororwa. Izvi zvinobatsira zvakananga mukuderedza mwero wekuumbwa kwezvikanganiso uye kuvandudza kudzokorora kwemaitiro.

Kuvandudzika Kunogona Kuverengerwa muSilicon Carbide Crystal Growth Performance

Kubatanidzwa kwehunyanzvi uhwu hwepamusoro-soro kwakaita kuti pave nekuvandudzwa kunoyerwa mukugadzirwa kwezvinhu zvakakosha. Sisitimu yekupisa yakagadziridzwa yakaratidzwa kuti inowedzera kukura kwekristaro ne15-20%, kuchengetedza kugadzikana kwemugoho wewafer pamusoro pe90%, kuwedzera nguva yekugadzirisa kubva pamwedzi mitatu kusvika mitanhatu, uye kuderedza mari yekushandisa neinenge 40%. Chinonyanya kukosha ndechekuti, kuvandudzwa uku kunogonesa defect densities dziri pasi pe0.05 defects/cm², nokudaro zvichigonesa kugadzirwa kwe substrates dzinoshanda zvakanaka dzakakodzera kushandiswa kwemagetsi emotokari nemaindasitiri.

Sezvo kudiwa kwepasi rose kwemidziyo yesilicon carbide kuri kuramba kuchikura, mukana wekukwikwidzana wevagadziri veSiC substrate unowedzera kutsamira pakukwanisa kwavo kudzora mhando yekristaro, kuwedzera kushandiswa kwereactor, uye kuderedza kusiyana kwekugadzira. Zvichienderana neizvi, zvinhu zvemhando yepamusoro zvethermal field - zvinosanganisira zvikamu zvegraphite zvakaputirwa neTaC, ultra-high-purity SiC feedstock, mainjiniya egraphite structures, uye pyrolytic carbon protective layers - zvave matekinoroji akakosha ekukura kwemakristaro ePVT silicon carbide echizvarwa chinotevera.

Tichitarisa mberi, kuramba tichigadzira zvinhu zvitsva mu thermal field engineering kuchaita basa guru mukuwana saizi huru dzewafer, kugona kugadzira kwakawanda, uye kudzikira kwehurema. Kune vagadziri vakazvipira kugadzira SiC wafer inokwanisika uye isingadhuri, kugadzirisa thermal field hakusisiri chinhu chechipiri asi chinodiwa chekuchengetedza makwikwi kwenguva refu mumusika we semiconductor uri kukura nekukurumidza une bandgap yakawanda.

Mibvunzo Inowanzo bvunzwa Nezve PVT Silicon Carbide Crystal Growth

1. Chii chinonzi PVT Silicon Carbide Crystal Growth, uye sei iriyo nzira inonyanya kufarirwa yekugadzira SiC substrates?

Kutakura Vapor (PVT) ndiyo tekinoroji inonyanya kushandiswa pakugadzira zvinhu zvemhando yepamusoro zvesilicon carbide. Mukuita uku, zvinhu zveSiC zvine hutsanana hwakanyanya zvinonyungudutswa patembiricha dzinopfuura 2000°C uye zvinotakurwa kuburikidza nechikamu cheutsi chinodzora usati wadzoserwa kuonda pakristaro yembeu.

Kana tichienzanisa nedzimwe nzira dzekugadzira makristaro, PVT inopa mukana wepamusoro wekugadzira makristaro makuru e4H-SiC uku ichichengetedza hunhu hwekristaro hunogamuchirwa uye hupfumi hwekugadzira. Sezvo indasitiri ichichinja kuenda kumawafers e200 mm (8-inch), kuvandudzwa kuri kuramba kuchienderera mberi mukugadzirwa kwePVT thermal field, kudzora kutakurwa kwemhepo, uye kuchena kwezvinhu zvichiri kukosha kuti pave nekugadzirwa kwemaindasitiri kunobereka goho guru.

2. Ndezvipi zvinetso zvinomuka kana uchichinja kubva pakugadzira wafer yeSiC ye 6-inch kuenda ku 8-inch?

Kuchinja kubva pa150 mm (6-inch) kuenda ku200 mm (8-inch) SiC wafers kunomiririra chimwe chezvinhu zvakakosha muindasitiri ye semiconductor ine gap yakakura. Zvisinei, dhayamita hombe dzekristaro dzinounza matambudziko makuru ehunyanzvi.

Kuwanda kwekupisa kwekristaro kunowedzera zvakanyanya, zvichida nguva yakareba yekukura uye kudzora kwakasimba pamusoro pe radial tembiricha gradients. Kusawirirana kudiki kwekupisa kunogona kugamuchirwa mumakristaro madiki kunogona kuva manyuko makuru ekushushikana, kutsemuka, uye kupararira kwezvikanganiso mumaboules makuru.

Nekuda kweizvozvo, kugadzirwa kweSiC ye 8-inch kunoda zvinhu zvekupisa zvakanyanya, zvivakwa zvekudzivirira zvinovandudzika, machira epamusoro, uye magadzirirwo echoto akagadziridzwa zvakanyanya kuchengetedza kugadzikana kwemaitiro mukati menguva refu yekukura.

3. Kuputira TaC kunovandudza sei mashandiro ePVT Silicon Carbide Crystal Growth?

Tantalum carbide (TaC) ndeimwe yezvinhu zveceramic zvinogara kwenguva refu uye zvine makemikari akasimba zviripo pakukura kwePVT. Nekunyunguduka kwemvura kuri kusvika 3880°C, machira eTaC anopa simba rakanaka pakurwisa utsi hwakapfuma musilicon hunogadzirwa panguva yekushandiswa kweSiC sublimation.

Kana ikashandiswa kuzvikamu zvegraphite kuburikidza neChemical Vapor Deposition (CVD), TaC inoshanda sechidziviriro chekupararira chinodzivirira kukanganiswa kwemakemikari, inoderedza kugadzirwa kwezvikamu, uye inochengetedza geometry yekutanga yezvivakwa zvemunda wekupisa.

Kuchengetedza kugadzikana kwehukuru panguva yekureba kwekukura kunobatsira kudzikamisa mamiriro ekufambisa utsi uye kupisa, izvo zvinobatsira zvakananga mukuvandudza kukura kwemakristaro uye kudzikisa huwandu hwemavanga.